Nonvolatile semiconductor memory and read method
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United States of America Patent
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Apr 29, 2003
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N/A
app pub date -
Feb 6, 2002
filing date -
Dec 20, 1996
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Abstract
In a nonvolatile semiconductor memory in which multiple-value information is stored in one memory cell by setting a plurality of threshold values, data is successively read from word lines while continuously changing the word-line read level from a lowest level to a highest level, and the next bit line is selectively precharged in accordance with the data stored in latch means for storing read data.
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