Silicon-on-silicon hybrid wafer assembly
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United States of America Patent
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May 6, 2003
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app pub date -
Feb 29, 2000
filing date -
May 12, 1997
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Abstract
A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.
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