Importance

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Abstract

A method for producing structures in chips is realized by carrying out a sequence of structuring steps in a self-adjusting manner. By structuring a first auxiliary layer applied on a substrate, a first masking structure is formed after a first masking procedure, which first masking structure has at least one partial region projecting beyond the surface of the substrate. After this, a further structuring step is carried out, for instance, by etching, implantation or CVD, using the previously produced first masking structure as a mask. After this, the first masking structure with a view to forming a second masking structure is inverted by applying at least one second auxiliary layer onto the first masking structure. The thus formed structure is at least partially taken off and the thus denuded first auxiliary layer is selectively removed, whereupon the second masking structure is used as a mask for a further structuring step.

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First Claim