Barrier layer structure for copper metallization and method of forming the structure
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United States of America Patent
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May 13, 2003
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N/A
app pub date -
Aug 9, 2000
filing date -
Aug 9, 2000
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Expired
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Abstract
A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
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