Memory elements and methods for making same
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United States of America Patent
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May 13, 2003
Grant Date -
Oct 31, 2002
app pub date -
Mar 15, 2001
filing date -
Mar 15, 2001
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
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