Apparatus for sputtering ionized material in a medium to high density plasma
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United States of America Patent
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May 20, 2003
Grant Date -
N/A
app pub date -
Sep 15, 1997
filing date -
Sep 15, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for processing workpieces, which include a chamber having a coil for inductively coupling RF energy through a dielectric window into the chamber to energize a plasma, and a shield positioned between a sputtering target and the dielectric window to reduce or eliminate deposition of sputtered material onto a portion of the dielectric window. In the illustrated embodiment, the window shield is spaced from the dielectric window to define a gap and has at least one opening, which permit RF energy to be coupled through the gap and through the window shield opening to the interior of the chamber. As a consequence, the coil may be positioned exterior to the chamber to simplify construction and operation of the chamber.
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