High voltage integrated switching devices on a bonded and trenched silicon substrate
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United States of America Patent
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May 20, 2003
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N/A
app pub date -
Aug 15, 2000
filing date -
Aug 15, 2000
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Abstract
A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
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