Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer
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United States of America Patent
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May 27, 2003
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N/A
app pub date -
Nov 15, 2000
filing date -
Mar 29, 2000
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Abstract
A method and apparatus for measuring the concentration of different mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by different ions drifting across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow different mobile ions in the oxide to drift. The difference in the contact potential measured before and after heating provides an indication of the different mobile ion concentration in the oxide layer.
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