Semiconductor device production method, electro-optical device production method, semiconductor device, and electro-optical device
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United States of America Patent
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May 27, 2003
Issued Date -
N/A
app pub date -
Feb 28, 2000
filing date -
Feb 26, 1999
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Abstract
A liquid crystal device, which is an example of an electro-optical device, includes a TFT, a data line, a scanning line, a second capacitor electrode, and a pixel electrode, all formed on a TFT array substrate. The pixel electrode and the TFT are electrically connected to each other via a conductive layer and via two contact holes. A second storage capacitor is formed between the second capacitor electrode and a part of the conductive layer, wherein a part of a second insulating thin film is disposed between the second capacitor electrode and the part of the conductive layer. The second insulating thin film is formed of an oxide film obtained by oxidizing the scanning line and the second capacitor electrode.
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