Radiation assisted electron emission device
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United States of America Patent
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May 27, 2003
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N/A
app pub date -
Dec 30, 1999
filing date -
Dec 30, 1999
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Abstract
A radiation assisted electron emission device uses semiconductor or semi-insulator material formed with an emission mechanism such as a field emission tip, a thermionic emission device, or a negative electron affinity emitter as a source of electrons. The material is irradiated with a source of radiation, such as electromagnetic radiation, neutron radiation, or charged particle radiation, which excites electron-hole pairs in the material to generate a population of free conducting electrons. The electrons are driven to the emission mechanism by a suitable transport process, such as diffusion or drift. The electron emission device has applicability to a broad range of technologies where an electron beam or current is used.
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