Methods for improving carrier mobility of PMOS and NMOS devices
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United States of America Patent
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Jun 3, 2003
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N/A
app pub date -
Sep 16, 2002
filing date -
Sep 16, 2002
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Abstract
Methods are described for fabricating semiconductor devices, in which a tensile film is formed over PMOS transistors to cause a compressive stress therein and a compressive film is formed over NMOS transistors to achieve a tensile stress therein, by which improved carrier mobility is facilitated in both PMOS and NMOS devices.
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