Reduced dark current pin photo diodes using intentional doping
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United States of America Patent
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Jun 3, 2003
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app pub date -
Feb 7, 2001
filing date -
Mar 1, 1999
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Abstract
In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap (16) doping (n.about.2.5-6.times.10.sup.16 /cm.sup.3), and nominally undoped (not intentionally doped, n.about.1.times.10.sup.13 -5.times.10.sup.14 /cm.sup.3) InGaAs absorption regions (10). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between n.about.5.times.10.sup.17 /cm.sup.3 and 1.times.10.sup.14 /cm.sup.3, in the InGaAs absorption region (52, 60) are significantly increased over that of a standard structure (non-intentionally doped).
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