Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
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United States of America Patent
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Jun 10, 2003
Grant Date -
Jun 13, 2002
app pub date -
Dec 19, 2000
filing date -
Dec 22, 1999
priority date (Note) -
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Abstract
An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer (112 of FIG. 7d) having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug (704 of FIG. 7d) having a top surface substantially coplanar with the top surface of the dielectric layer; subjecting the top surface of the dielectric layer and the top surface of the conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH.sub.4, and any combination thereof, the gas being incorporated into a high-temperature ambient or a plasma; and forming the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the step of subjecting the top surface of the dielectric layer and the top surface of the conductive plug to the gas incorporated into the high-temperature ambient or the plasma.
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