Applications of a semi-empirical, physically based, profile simulator
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United States of America Patent
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Jun 10, 2003
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Jun 30, 2000
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Mar 3, 1998
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Abstract
A method and an apparatus for a semi-empirical process simulation using a calibrated profile simulator to create a reactor model which can predict neutral and ion flux distributions on a substrate as a function of the reactor settings include providing a set of conditions characterized by unique reactor settings. Wafers are processed under each condition. Etch or deposition rates and surface profiles are measured and used in the calibrated profile simulator to derive the flux distributions. The flux distributions data generated by the processes are then used to create a reactor model.
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