Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the same

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United States of America Patent

PATENT NO 6579068
APP PUB NO 20020067992A1
SERIAL NO

09923483

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Abstract

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A suspended p-GaN membrane is formed using photochemical etching which membrane can then be used in a variety of MEMS devices. In the illustrated embodiment a pump is comprised of the p-GaN membrane suspended between two opposing, parallel n-GaN support pillars, which are anchored to a rigid substrate below the pillars. The p-GaN membrane bows upward between the pillars in order to relieve stress built up during the epitaxial growth of membrane. This bowing substantially increases the volume of the enclosed micro-channel defined between membrane and substrate below. The ends of membrane are finished off by a gradual transition to the flat underlying n-GaN layer in which fluidic channels may also be defined to provide inlet and outlet channels to microchannel. A traveling wave or sequential voltage applied to the electrodes causes the membrane to deform and provide a peristaltic pumping action in the microchannel.

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Patent Owner(s)

Patent OwnerAddress
CALIFORNIA INSTITUTE OF TECHNOLOGY1200 E CALIFORNIA BOULEVARD M/C 6-32 PASADENA CA 91125

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beach, Robert A Pasadena, CA 4 79
Bridger, Paul M Pasadena, CA 5 113
McGill, Thomas C Pasadena, CA 16 551
Strittmatter, Robert P Pasadena, CA 4 79

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