Capacitor electrode for integrating high k materials
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United States of America Patent
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Jun 17, 2003
Issued Date -
N/A
app pub date -
Jul 19, 2001
filing date -
Jan 5, 1999
priority date (Note) -
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Abstract
A conductive composition of tantalum nitride is disclosed for use as a conductive element in integrated circuits. The layer is shown employed in a memory cell, and in particular in a cell incorporating a high dielectric constant material such as Ta.sub.2 O.sub.5. The tantalum nitride can serve as a barrier layer protecting an underlying contact plug, or can serve as the top or bottom electrode of the memory cell capacitor. The titanium nitride has a nitrogen content of between about 7% and 40%, thereby balancing susceptibility to oxidation with conductivity. In an illustrative embodiment, the titanium nitride layer is a bilayer formed of a thick portion having a low nitrogen concentration, and thin portion with a higher nitrogen concentration. The thick portion thus carries the bulk of the current with low resistivity, while the thinner portion is highly resistant to oxidation.
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