Metal pattern forming method

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United States of America Patent

PATENT NO 6582767
SERIAL NO

09702852

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Abstract

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A method for forming a metal pattern by the micro-stamping process involves the steps of treating a substrate bearing a thin film of a reducing silicon polymer with a solution containing a salt of a metal having a standard oxidation-reduction potential of at least 0.54 volt, allowing metal colloid to deposit on the substrate surface, stamping a pattern of an alkane thiol to the substrate surface for transferring the pattern to the metal colloid-bearing silicon polymer thin film, and effecting electroless metal plating for forming a metal pattern only on the region of the silicon polymer thin film which is not covered with the alkane thiol pattern. The finely defined metal pattern can be formed on any type of substrate though inexpensive simple steps and has good adhesion to the substrate.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Masaya Gunma-ken, JP 33 148
Fukushima, Motoo Gunma-ken, JP 48 601
Furihata, Tomoyoshi Gunma-ken, JP 37 238
Tabei, Eiichi Gunma-ken, JP 34 220

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