Plasma etching of silicon using fluorinated gas mixtures

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6583063
SERIAL NO

09263634

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khan, Anisul Sunnyvale, CA 27 672
Kim, Nam-Hun Cupertino, CA 13 857
Lee, Gene San Jose, CA 55 545
Podlesnik, Dragan Palo Alto, CA 27 996

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation