Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator
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United States of America Patent
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Jun 24, 2003
Grant Date -
N/A
app pub date -
Oct 14, 1998
filing date -
Oct 14, 1997
priority date (Note) -
Expired
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Abstract
A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO.sub.2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.
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