Semiconducting oxide nanostructures
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United States of America Patent
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Jul 1, 2003
Grant Date -
Jul 18, 2002
app pub date -
Jan 8, 2002
filing date -
Jan 12, 2001
priority date (Note) -
Expired
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Abstract
Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.
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