Method for making programmable resistance memory element using silylated photoresist
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United States of America Patent
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Jul 8, 2003
Grant Date -
Feb 27, 2003
app pub date -
Jun 26, 2001
filing date -
Jun 26, 2001
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Abstract
A method of making a electrically operated programmable resistance memory element. A silylated photoresist sidewall spacer is used as a mask for form raised portions on an edge of a conductive layer. The modified conductive layer is used as an electrode for the memory element.
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