Semiconductor chip that isolates DRAM cells from the peripheral circuitry and reduces the cell leakage current
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United States of America Patent
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Jul 8, 2003
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N/A
app pub date -
May 3, 2001
filing date -
Oct 6, 1998
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Abstract
The dynamic random access memory (DRAM) cells in a semiconductor chip are isolated from the peripheral circuitry by forming the DRAM cells directly in the substrate while the peripheral and other functional circuits are formed in wells that are isolated from the substrate. In addition to providing isolation, the placement of the DRAM cells also reduces the leakage current in the cells, thereby increasing the time that a DRAM cell can hold a charge without being refreshed.
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