Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jul 8, 2003
Issued Date -
N/A
app pub date -
Oct 15, 1997
filing date -
Oct 15, 1996
priority date (Note) -
Expired
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Abstract
An active layer is formed by using a crystalline silicon film that has been crystallized by utilizing a metal element for accelerating crystallization. A heat treatment is performed in an atmosphere containing a halogen element to remove the metal element by gettering. As a result, the active layer becomes a crystal structural body that is a collection of a plurality of needle-like or columnar crystals. A semiconductor device constructed by using this crystal structural body is given much superior performance.
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