MOS capacitor with wide voltage and frequency operating ranges
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United States of America Patent
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Jul 8, 2003
Issued Date -
N/A
app pub date -
Jul 27, 2001
filing date -
Jul 30, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOS capacitor comprises a semiconductor substrate, a first well region of a first conductivity type formed in the substrate, at least one doped region formed in the first well region, and an insulated gate layer insulatively disposed over a surface of the first well region. The at least one doped region and the insulated gate layer respectively form a first and a second electrode of the capacitor. The first well region is electrically connected to the at least one doped region to be at a same electrical potential of the first terminal of the capacitor.
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