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Abstract

The present invention provides a heat-resistant and low-electric-resistance aluminum alloy thin film which, even after heat treatment at 300-400.degree. C., exhibits no hillock generation and has a specific resistance of 7 .mu..OMEGA..multidot.cm or less and also provides a sputtering target material employed for forming such aluminum alloy thin film. The thin film of aluminum alloy of the present invention contains, as components of the alloy, aluminum, carbon, and magnesium, wherein the carbon content and the magnesium content fall within a region defined by the following formulas: X=0.61; X=8; Y=2; and Y=-0.13X+1.3, wherein Y (at %) represents the carbon content by atomic percent and X (at %) represents the magnesium content by atomic percent, and the balance of (X+Y) contains aluminum and unavoidable impurities. The sputtering target material of the present invention for forming thin film of aluminum alloy, containing, as components of the material, aluminum, carbon, magnesium, and unavoidable impurities, wherein the carbon content and the magnesium content fall within a region defined by the aforementioned formulas, and the balance of (X+Y) is aluminum and unavoidable impurities.

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First Claim