Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
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United States of America Patent
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Jul 15, 2003
Grant Date -
Feb 6, 2003
app pub date -
Jun 26, 2001
filing date -
Mar 22, 1999
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Abstract
Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.
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