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Abstract

A high-speed silicon photodiode and method of manufacture include a first layer of silicon having thickness in a range of about 125 .mu.m to about 550 .mu.m. A second layer of silicon has a thickness in a range of about 3 .mu.m to about 16 .mu.m and a resistivity of at least about 500 ohm-cm. This first layer is doped with a second type of impurity. In an alternative aspect, a high-speed silicon photodiode and method of manufacture includes a silicon wafer doped with a first type of impurity. On a first side of the wafer a doping of a second type is applied in an active area of a photodiode. On the reverse of the wafer a volume of silicon is etched away and the resulting trench is coated with a conductor. The wafer may also exhibit a high resistivity of at least about 500 ohm-cm. In each aspect, a reverse bias not exceeding about 3.3 volts permits operation with a frequency response of at least 750 MHz.

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First Claim