US Patent No: 6,593,636
Number of patents in Portfolio can not be more than 2000
High speed silicon photodiodes and method of manufacture
Stats
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Jul 15, 2003
Issued date -
Dec 5, 2000
filing date -
09/730,896
serial no -
Expired
status
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Abstract
A high-speed silicon photodiode and method of manufacture include a first layer of silicon having thickness in a range of about 125 .mu.m to about 550 .mu.m. A second layer of silicon has a thickness in a range of about 3 .mu.m to about 16 .mu.m and a resistivity of at least about 500 ohm-cm. This first layer is doped with a second type of impurity. In an alternative aspect, a high-speed silicon photodiode and method of manufacture includes a silicon wafer doped with a first type of impurity. On a first side of the wafer a doping of a second type is applied in an active area of a photodiode. On the reverse of the wafer a volume of silicon is etched away and the resulting trench is coated with a conductor. The wafer may also exhibit a high resistivity of at least about 500 ohm-cm. In each aspect, a reverse bias not exceeding about 3.3 volts permits operation with a frequency response of at least 750 MHz.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 5,252,851 Semiconductor integrated circuit with photo diode | 21 | 1992 | |
| 5,418,396 Optical semiconductor device and fabrication method therefor | 15 | 1993 | |
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| 4,616,247 P-I-N and avalanche photodiodes | 16 | 1983 | |
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| 5,040,039 Semiconductor photodetector device | 34 | 1990 | |
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| 6,027,956 Process for producing planar dielectrically isolated high speed pin photodiode | 37 | 1998 | |
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| 5,315,148 Photo-sensing device | 3 | 1993 | |
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| 4,857,980 Radiation-sensitive semiconductor device with active screening diode | 13 | 1988 | |
Patent Citation Ranking
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