Process integration of electrical thickness measurement of gate oxide and tunnel oxides by corona discharge technique
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United States of America Patent
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Jul 15, 2003
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app pub date -
Jul 12, 2001
filing date -
Jul 12, 2001
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Abstract
The present invention relates to a system for controlling a thin film formation process using a corona discharge measurement technique. The system includes a thin film formation system operative to form a thin film based on one or more process parameters, a corona discharge measurement system operable to measure one or more properties of the thin film, and a processor operatively coupled to the thin film formation system and the corona discharge measurement system, wherein the processor analyzes the data from the corona discharge measurement system and a set of target data and controls the one or more process parameters via the thin film formation system based on the analysis. The present invention also relates to a method for controlling a thin film formation using a corona discharge technique. The method includes forming a thin film based on one or more thin film formation process parameters, measuring the thin film via a corona discharge technique, analyzing the results of the corona discharge measurement, and controlling the one or more thin film formation process parameters based on the analysis.
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