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Abstract

An apparatus and method for the deposition of thin film material layers provides improved use of processing chamber space for enhanced processing capability in the fabrication of microelectronic devices. In one embodiment, a physical-vapor deposition target offset from the processing chamber central axis, such as a target having an annular shape and central opening, deposits a material on a substrate while leaving the central region of the processing chamber available for other deposition techniques, including a centrally located sputtering target, CVD showerhead, or ion source. Alternatively, a collimator divides a processing chamber into sub-chambers and allows energetic species from a PVD target or ion source to pass to a substrate located in a separate sub-chamber for interaction with a CVD precursor without mixing the precursor and the plasma associated with the PVD or ion processes. The apparatus supports deposition of material from a single precursor in a manner that mimics atomic layer deposition since the process of subjecting a precursor to energetic species, such as ions or material atoms, allows disassociation of material from the precursor at lower temperatures.

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First Claim