Solid-state quantum dot devices and quantum computing using nanostructured logic gates
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United States of America Patent
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Jul 22, 2003
Grant Date -
Dec 5, 2002
app pub date -
Mar 8, 2002
filing date -
Mar 9, 2001
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Abstract
Semiconductor dot devices include a multiple layer semiconductor structure having a substrate, a back gate electrode layer, a quantum well layer, a tunnel barrier layer between the quantum well layer and the back gate, and a barrier layer above the quantum well layer. Multiple electrode gates are formed on the multi-layer semiconductor with the gates spaced from each other by a region beneath which quantum dots may be defined. Appropriate voltages applied to the electrodes allow the development and appropriate positioning of the quantum dots, allowing a large number of quantum dots be formed in a series with appropriate coupling between the dots.
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