Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film
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United States of America Patent
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Jul 29, 2003
Grant Date -
Dec 12, 2002
app pub date -
Aug 28, 2001
filing date -
Dec 28, 1999
priority date (Note) -
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Abstract
The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350.degree. C., and then (c) curing the thus treated film at 350 to 450.degree. C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350.degree. C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450.degree. C. According to the present invention, a semiconductor substrate coated with a silica-containing film having characteristics of a low-dielectric constant of 3 or less, a low moisture adsorptivity and high film strength without causing any damage to the metal wiring arranged on the substrate, can be obtained steadily.
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