High voltage level shifter
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United States of America Patent
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-
Jul 29, 2003
Grant Date -
N/A
app pub date -
Mar 26, 2002
filing date -
Mar 27, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
According to the present invention, a voltage level shifter with smaller size and less latch-up probability is described, in which extra two N-MOS transistors and two P-MOS transistors are added. The extra transistors help node voltages increase or decrease appropriately, and then the size of driving transistors can be small. As a result, the total size of the layout can be smaller. In addition, the voltage increasing or decreasing done by the extra transistors reduce a voltage bouncing which call cause latch-up.
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