Method and circuits for parallel sensing of current in a field effect transistor (FET)
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United States of America Patent
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Jul 29, 2003
Grant Date -
N/A
app pub date -
Feb 8, 2002
filing date -
Feb 8, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A circuit for parallel sensing of the current in a power FET includes a sense FET and a current conveyor circuit employing exclusively FET devices. All FET devices may be MOSFET devices or JFET devices. The sense FET and the power FET have their gate terminals connected together and their source terminals connected together. The current conveyor circuit includes a current mirror. One or more additional current mirrors may be employed. One or more of the additional current mirrors may be cascoded or have other circuit techniques applied to them, in order to enhance their performance, hence overall circuit current sense performance.
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