Method for generating a proximity model based on proximity rules
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United States of America Patent
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Aug 5, 2003
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N/A
app pub date -
Jan 5, 2001
filing date -
Jan 5, 2001
priority date (Note) -
Expired
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Abstract
A method for generating an optical proximity correction (OPC) model includes generating a set of correction rules for a wafer design containing at least one of lines and assist features, determining a set of corrections that need to be made over a range of sizes and spaces of the lines and assist features based on the set of correction rules, and creating an optical proximity correction model for correcting the wafer design based on the set of corrections.
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