Method of producing a semiconductor layer on a substrate
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United States of America Patent
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Aug 5, 2003
Grant Date -
Aug 8, 2002
app pub date -
Dec 19, 2001
filing date -
Dec 21, 2000
priority date (Note) -
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Abstract
A method of producing a semiconductor layer onto a semiconductor substrate. The method comprises providing a first semiconductor substrate, and providing a second semiconductor substrate. The method also comprises producing a porous layer, which has a porosity profile, on top of the first semiconductor substrate, and producing a porous layer, which has a porosity profile, on top of the second semiconductor substrate. The method further comprises bringing the porous layer of the second substrate into contact with the porous layer of the first substrate, so as to form a bond between the two substrates, performing a thermal annealing step, and lifting off of the second substrate, leaving a layer of the second substrate's semiconductor material attached to the first substrate.
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