Fabrication method of thin-film semiconductor device
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United States of America Patent
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Aug 5, 2003
Issued Date -
N/A
app pub date -
Jun 8, 2001
filing date -
Jun 12, 2000
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Expired
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Abstract
An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.
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