Gallium nitride group compound semiconductor light-emitting device

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United States of America Patent

PATENT NO 6603146
SERIAL NO

09684279

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Abstract

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A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.

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Patent Owner(s)

Patent OwnerAddress
SHARP KABUSHIKI KAISHASAKAI-SHI OSAKA 590-8522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hata, Toshio Nara, JP 140 2028
Kamikawa, Takeshi Nara, JP 124 1125
Morimoto, Taiji Nara, JP 51 646
Yamamoto, Kensaku Tenri, JP 67 621

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