Overvoltage protection device
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United States of America Patent
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-
Aug 5, 2003
Grant Date -
Dec 19, 2002
app pub date -
Apr 4, 2002
filing date -
Apr 7, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device has a PN junction between first and second regions of the device in which in the intended operation of the device reverse breakdown of the junction occurs. The first region is of lower impurity concentration than the second region and a first buried region of the same conductivity type as and of higher impurity concentration than the first region is provided in the first region adjacent to the junction. A second buried region of the same conductivity type as and of higher impurity concentration than the first buried region is provided in the first buried region and one of the first and second buried regions is formed with a plurality of separate regions of small area arranged so that reverse breakdown of the junction preferentially occurs through the second buried region.
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