Semiconductor device having ferroelectric capacitor and method for manufacturing the same
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United States of America Patent
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Aug 5, 2003
Grant Date -
Sep 20, 2001
app pub date -
Mar 9, 2001
filing date -
Mar 10, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
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