Aperture for linear control of vacuum chamber pressure
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United States of America Patent
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Aug 12, 2003
Grant Date -
Jan 16, 2003
app pub date -
Jul 13, 2001
filing date -
Jul 13, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
The linear controlling of the pressure of a vacuum chamber, such as a plasma etch chamber used in semiconductor processing, is disclosed. A plasma etch chamber pressure control mechanism includes an aperture diaphragm and a number of aperture blades rotatably mounted on the aperture diaphragm. The diaphragm defines a contractible and expandable aperture for controlling the pressure of the chamber. Rotation of the aperture blades in a first direction contracts the aperture by causing movement of the blades towards the aperture, increasing the pressure of the chamber. Rotation of the aperture blades in a second direction opposite to the first direction expands the aperture by causing movement of the blades away from the aperture, decreasing the pressure of the chamber.
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