Hole-filling technique using CVD aluminum and PVD aluminum integration
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United States of America Patent
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Aug 12, 2003
Grant Date -
N/A
app pub date -
Jul 31, 1998
filing date -
Nov 26, 1997
priority date (Note) -
Expired
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Abstract
The present invention provides a method for filling an aperture on a substrate by depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture and then annealing the substrate in a low pressure chamber at a temperature below a melting point of the deposited metal film. The present invention further provides forming a planarized film over the void-free aperture by physical vapor depositing a metal film over the annealed film.
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