Phase change material electronic memory structure and method for forming
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United States of America Patent
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Aug 12, 2003
Grant Date -
N/A
app pub date -
May 10, 2002
filing date -
May 10, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.
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