Method of making semiconductor device using an interconnect
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United States of America Patent
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Aug 12, 2003
Grant Date -
Jun 19, 2003
app pub date -
Dec 19, 2001
filing date -
Dec 19, 2001
priority date (Note) -
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Abstract
The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
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