Method for making small pore for use in programmable resistance memory element

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United States of America Patent

PATENT NO 6613604
SERIAL NO

09955408

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Abstract

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A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Klersy, Patrick Lake Orion, MI 28 3717
Maimon, Jon Manassas, VA 17 1346

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