Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
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United States of America Patent
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Sep 2, 2003
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Jun 26, 2001
filing date -
Jun 26, 2001
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Abstract
Disclosed is a method for making low metallic impurity SiO-based dielectric thin films on semiconductor substrates using a room temperature wet chemical growth (RTWCG) process for electronic and photonic (optoelectronic) device applications. The process comprises soaking the semiconductor substrate into the growth solution. The process utilizes a mixture of aqueous inorganic or organic based silicon source solution, an inorganic reduction oxidation (redox) aqueous solution, non-invasive inorganic or organic based liquid additives for adjusting the growth rate and reducing the metallic impurity concentration within the SiO-based film, with or without an electron exchange pyridine based component, and an inorganic homogeneous catalyst for enhancing the growth of the SiO-based film.
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