Composition and method for polishing in metal CMP
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United States of America Patent
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Sep 9, 2003
Grant Date -
Sep 27, 2001
app pub date -
May 16, 2001
filing date -
Jun 10, 1998
priority date (Note) -
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Abstract
A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO.sub.2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
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