Evaluating method of hydrophobic process, forming method of resist pattern, and forming system of resist pattern
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Sep 9, 2003
Grant Date -
Jan 24, 2002
app pub date -
Apr 6, 2001
filing date -
Apr 7, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH.sub.9 Si.sup.+, C.sub.3 H.sub.9 Si.sup.+, C.sub.3 H.sub.9 Osi.sup.- and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.
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