US Patent No: 6,617,192

Number of patents in Portfolio can not be more than 2000

Electrically programmable memory element with multi-regioned contact

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Abstract

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An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX, INC.BOISE, ID298

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hudgens, Stephen J Santa Clara, CA 87 6371
Klersy, Patrick J Troy, MI 15 2245
Lowrey, Tyler - 227 4150

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (1)
* 5,854,102 Vertical diode structures with low series resistance 45 1997
 
ROUND ROCK RESEARCH, LLC (1)
* 6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 217 2001
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 5,441,907 Process for manufacturing a plug-diode mask ROM 104 1994
 
UNITED MICROELECTRONICS CORP. (1)
* 5,937,280 Method of manufacturing a ROM 14 1997
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (192)
7,385,235 Spacer chalcogenide memory device 89 2004
7,033,856 Spacer chalcogenide memory method 152 2004
7,220,983 Self-aligned small contact phase-change memory method and device 183 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 5 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 108 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 97 2005
7,608,503 Side wall active pin memory and manufacturing method 12 2005
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 48 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 107 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 1 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
7,471,555 Thermally insulated phase change memory device 4 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 0 2006
* 7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 2 2006
7,397,060 Pipe shaped phase change memory 99 2006
* 7,554,144 Memory device and manufacturing method 6 2006
7,928,421 Phase change memory cell with vacuum spacer 6 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 63 2006
7,449,710 Vacuum jacket for phase change memory element 85 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 7 2006
8,129,706 Structures and methods of a bistable resistive random access memory 6 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 61 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 6 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 0 2006
7,423,300 Single-mask phase change memory element 96 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 0 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 0 2006
7,459,717 Phase change memory cell and manufacturing method 15 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
8,237,140 Self-aligned, embedded phase change RAM 0 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 1 2006
7,560,337 Programmable resistive RAM and manufacturing method 23 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 4 2006
7,785,920 Method for making a pillar-type phase change memory element 2 2006
7,741,636 Programmable resistive RAM and manufacturing method 2 2006
7,450,411 Phase change memory device and manufacturing method 2 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 7 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 30 2006
7,504,653 Memory cell device with circumferentially-extending memory element 22 2006
7,510,929 Method for making memory cell device 2 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 1 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2006
8,067,762 Resistance random access memory structure for enhanced retention 2 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 1 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 20 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 54 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 0 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 66 2006
7,718,989 Resistor random access memory cell device 4 2006
7,786,460 Phase change memory device and manufacturing method 51 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 13 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
7,483,292 Memory cell with separate read and program paths 5 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 3 2007
7,534,647 Damascene phase change RAM and manufacturing method 2 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 3 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 8 2007
8,610,098 Phase change memory bridge cell with diode isolation device 0 2007
7,755,076 self align side wall active phase change memory 23 2007
7,569,844 Memory cell sidewall contacting side electrode 31 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 54 2007
7,463,512 Memory element with reduced-current phase change element 13 2007
7,701,759 Memory cell device and programming methods 12 2007
8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory 0 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 16 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 13 2007
7,663,135 Memory cell having a side electrode contact 5 2007
7,551,473 Programmable resistive memory with diode structure 16 2007
7,535,756 Method to tighten set distribution for PCRAM 10 2007
7,919,766 Method for making self aligning pillar memory cell device 3 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 1 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 3 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 12 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 3 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 5 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 2 2008
7,879,645 Fill-in etching free pore device 11 2008
7,619,311 Memory cell device with coplanar electrode surface and method 11 2008
8,158,965 Heating center PCRAM structure and methods for making 1 2008
7,932,101 Thermally contained/insulated phase change memory device and method 2 2008
8,084,842 Thermally stabilized electrode structure 1 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 9 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 13 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 50 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 1 2008
7,642,123 Thermally insulated phase change memory manufacturing method 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 0 2008
7,777,215 Resistive memory structure with buffer layer 21 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 2 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 5 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
7,719,913 Sensing circuit for PCRAM applications 1 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 2 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 0 2008
* 8,036,014 Phase change memory program method without over-reset 5 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 2 2008
8,907,316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 0 2008
8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 4 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 0 2008
7,869,270 Set algorithm for phase change memory cell 3 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 23 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 3 2009
8,107,283 Method for setting PCRAM devices 3 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 3 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 6 2009
8,077,505 Bipolar switching of phase change device 1 2009
8,097,871 Low operational current phase change memory structures 1 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 7 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 3 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,809,829 Phase change memory having stabilized microstructure and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 0 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 1 2009
8,110,822 Thermal protect PCRAM structure and methods for making 2 2009
7,894,254 Refresh circuitry for phase change memory 3 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 2 2009
8,198,619 Phase change memory cell structure 0 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 2 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 0 2009
7,972,895 Memory cell device with coplanar electrode surface and method 2 2009
7,993,962 I-shaped phase change memory cell 0 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 1 2009
7,929,340 Phase change memory cell and manufacturing method 3 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 1 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 1 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 1 2010
7,920,415 Memory cell device and programming methods 0 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 1 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 1 2010
8,178,405 Resistor random access memory cell device 1 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 2 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 0 2010
8,178,388 Programmable resistive RAM and manufacturing method 2 2010
8,729,521 Self aligned fin-type programmable memory cell 1 2010
8,237,148 self align side wall active phase change memory 0 2010
8,310,864 Self-aligned bit line under word line memory array 2 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 3 2010
7,943,920 Resistive memory structure with buffer layer 0 2010
8,008,114 Phase change memory device and manufacturing method 0 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 3 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 1 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 0 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 1 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 1 2010
8,110,430 Vacuum jacket for phase change memory element 0 2010
8,497,705 Phase change device for interconnection of programmable logic device 0 2010
8,467,238 Dynamic pulse operation for phase change memory 0 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 1 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 0 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,497,182 Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 0 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,587,983 Resistance random access memory structure for enhanced retention 0 2011
8,779,408 Phase change memory cell structure 0 2012
8,860,111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8,624,236 Phase change memory cell having vertical channel access transistor 0 2012
8,853,047 Self aligned fin-type programmable memory cell 0 2014
 
NANOCHIP, INC. (9)
6,985,377 Phase change media for high density data storage 10 2003
7,379,412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 2 2005
7,309,630 Method for forming patterned media for a high density data storage device 89 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 2 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
OVONYX, INC. (7)
* 7,227,171 Small area contact region, high efficiency phase change memory cell and fabrication method thereof 18 2002
* 6,946,673 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof 4 2003
* 6,764,897 Method of making programmable resistance memory element 8 2003
7,993,957 Phase change memory cell and manufacturing method thereof using minitrenches 2 2005
* 7,227,221 Multiple bit chalcogenide storage device 6 2006
* 8,269,208 Memory device 1 2008
* 8,796,101 Memory device 0 2012
 
QIMONDA AG (5)
7,057,201 Integrated semiconductor memory 1 2004
7,515,461 Current compliant sensing architecture for multilevel phase change memory 55 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 4 2007
8,030,634 Memory array with diode driver and method for fabricating the same 1 2008
7,825,398 Memory cell having improved mechanical stability 1 2008
 
STMICROELECTRONICS S.R.L. (3)
7,122,824 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 119 2004
7,372,166 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof 0 2005
7,618,840 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 0 2006
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (2)
* 7,598,113 Phase change memory device and fabricating method therefor 0 2006
* 7,868,314 Phase change memory device and fabricating method therefor 0 2009
 
SAMSUNG ELECTRONICS CO., LTD. (2)
7,642,540 Phase change random access memory and method of operating the same 1 2006
* 7,812,332 Phase change memory device and method of forming the same 1 2007
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (1)
* 7,365,354 Programmable resistance memory element and method for making same 2 2002
 
HITACHI ULSI SYSTEMS CO., LTD. (1)
* 8,129,707 Semiconductor integrated circuit device 0 2009
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 6,855,633 Method for fabricating semiconductor device 0 2002
 
MICRON TECHNOLOGY, INC. (1)
* 6,842,370 Vertical NROM having a storage density of 1 bit per 1F2 23 2004
 
SANDISK 3D LLC (1)
* 8,883,589 Counter doping compensation methods to improve diode performance 0 2010
 
UNIVERSITY OF SOUTHAMPTON (1)
8,624,215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 2 2006
 
Other [Check patent profile for assignment information] (1)
* 8,912,515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* Cited By Examiner

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