US Patent No: 6,617,192

Number of patents in Portfolio can not be more than 2000

Electrically programmable memory element with multi-regioned contact

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Abstract

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An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX MEMORY TECHNOLOGY, LLCALEXANDRIA, VA803

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hudgens, Stephen J Troy, MI 67 6666
Klersy, Patrick J Troy, MI 14 2337
Lowrey, Tyler Troy, MI 149 4664

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (1)
* 6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 226 2001
 
UNITED MICROELECTRONICS CORP. (1)
* 5,937,280 Method of manufacturing a ROM 16 1997
 
MICRON TECHNOLOGY, INC. (1)
* 5,854,102 Vertical diode structures with low series resistance 45 1997
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 5,441,907 Process for manufacturing a plug-diode mask ROM 114 1994
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
NANOCHIP, INC. (9)
6,985,377 Phase change media for high density data storage 11 2003
7,379,412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 3 2005
7,309,630 Method for forming patterned media for a high density data storage device 93 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 3 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
POLARIS INNOVATIONS LIMITED (1)
7,057,201 Integrated semiconductor memory 1 2004
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2015/0188,050 DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING METHOD THEREOF 0 2015
 
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (2)
* 9,466,793 Memristors having at least one junction 0 2010
* 2014/0097,398 MEMRISTIVE DEVICES AND MEMRISTORS WITH RIBBON-LIKE JUNCTIONS AND METHODS FOR FABRICATING THE SAME 0 2010
 
HITACHI ULSI SYSTEMS CO., LTD. (2)
* 8,129,707 Semiconductor integrated circuit device 1 2009
* 2009/0250,680 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 7 2009
 
MICRON TECHNOLOGY, INC. (5)
* 6,842,370 Vertical NROM having a storage density of 1 bit per 1F2 29 2004
* 2004/0202,032 Vertical NROM having a storage density of 1 bit per 1F2 5 2004
* 8,962,384 Memory cells having heaters with angled sidewalls 2 2012
* 2013/0187,120 MEMORY CELLS HAVING HEATERS WITH ANGLED SIDEWALLS 4 2012
9,343,671 Memory cells having heaters with angled sidewalls 0 2015
 
SAMSUNG ELECTRONICS CO., LTD. (10)
7,642,540 Phase change random access memory and method of operating the same 1 2006
* 2007/0051,935 Phase change random access memory and method of operating the same 15 2006
7,515,461 Current compliant sensing architecture for multilevel phase change memory 57 2007
* 2007/0272,950 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME 16 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 6 2007
* 7,812,332 Phase change memory device and method of forming the same 4 2007
* 2008/0116,437 Phase Change Memory Device and Method of Forming the Same 4 2007
8,030,634 Memory array with diode driver and method for fabricating the same 2 2008
7,825,398 Memory cell having improved mechanical stability 3 2008
* 2008/0272,355 PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME 30 2008
 
OVONYX MEMORY TECHNOLOGY, LLC (16)
* 7,365,354 Programmable resistance memory element and method for making same 2 2002
* 2003/0122,156 Programmable resistance memory element and method for making same 0 2002
* 7,227,171 Small area contact region, high efficiency phase change memory cell and fabrication method thereof 19 2002
* 2003/0219,924 Small area contact region, high efficiency phase change memory cell and fabrication method thereof 8 2002
* 6,946,673 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof 8 2003
* 2003/0161,195 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof 0 2003
* 6,764,897 Method of making programmable resistance memory element 8 2003
7,993,957 Phase change memory cell and manufacturing method thereof using minitrenches 2 2005
* 2005/0152,208 Phase change memory cell and manufacturing method thereof using minitrenches 5 2005
* 7,227,221 Multiple bit chalcogenide storage device 9 2006
* 2006/0118,774 Multiple bit chalcogenide storage device 5 2006
* 8,269,208 Memory device 2 2008
* 2009/0225,588 Memory Device 16 2008
* 2011/0237,045 PHASE CHANGE MEMORY CELL AND MANUFACTURING METHOD THEREOF USING MINITRENCHES 0 2011
* 8,796,101 Memory device 1 2012
* 2012/0329,237 Memory Device 0 2012
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (3)
* 7,598,113 Phase change memory device and fabricating method therefor 0 2006
* 7,868,314 Phase change memory device and fabricating method therefor 0 2009
* 2010/0140,583 PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR 2 2009
 
SANDISK TECHNOLOGIES LLC (2)
* 8,883,589 Counter doping compensation methods to improve diode performance 0 2010
* 2012/0074,367 COUNTER DOPING COMPENSATION METHODS TO IMPROVE DIODE PERFORMANCE 10 2010
 
MACRONIX INTERNATIONAL CO., LTD. (251)
7,385,235 Spacer chalcogenide memory device 93 2004
7,033,856 Spacer chalcogenide memory method 159 2004
* 2005/0093,022 Spacer chalcogenide memory device 20 2004
* 2005/0062,074 Spacer chalcogenide memory method 3 2004
7,220,983 Self-aligned small contact phase-change memory method and device 198 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 8 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 115 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 101 2005
* 2006/0284,279 Thin film fuse phase change RAM and manufacturing method 28 2005
* 2006/0286,709 Manufacturing methods for thin film fuse phase change ram 208 2005
* 2006/0284,157 Thin film plate phase change RAM circuit and manufacturing method 25 2005
7,608,503 Side wall active pin memory and manufacturing method 17 2005
* 2007/0111,429 Method of manufacturing a pipe shaped phase change memory 169 2006
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 51 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 117 2006
* 2007/0108,430 Thermally contained/insulated phase change memory device and method (combined) 25 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 3 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
* 2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 160 2006
7,471,555 Thermally insulated phase change memory device 5 2006
* 2007/0109,836 Thermally insulated phase change memory device and manufacturing method 20 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 1 2006
* 2007/0154,847 Chalcogenide layer etching method 163 2006
* 7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 3 2006
7,397,060 Pipe shaped phase change memory 112 2006
* 2007/0215,852 Manufacturing method for pipe-shaped electrode phase change memory 99 2006
* 2007/0108,429 Pipe shaped phase change memory 19 2006
* 7,554,144 Memory device and manufacturing method 6 2006
* 2007/0241,371 Memory device and manufacturing method 3 2006
7,928,421 Phase change memory cell with vacuum spacer 8 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 65 2006
7,449,710 Vacuum jacket for phase change memory element 88 2006
* 2007/0131,980 Vacuum jacket for phase change memory element 15 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 10 2006
* 2007/0176,261 Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods 53 2006
8,129,706 Structures and methods of a bistable resistive random access memory 10 2006
* 2007/0257,300 Structures and Methods of a Bistable Resistive Random Access Memory 141 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 86 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 11 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 1 2006
* 2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 174 2006
* 2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 162 2006
7,423,300 Single-mask phase change memory element 102 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 1 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 2 2006
* 2007/0278,529 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 20 2006
* 2007/0281,420 RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS 16 2006
7,459,717 Phase change memory cell and manufacturing method 18 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
* 2007/0121,363 Phase Change Memory Cell and Manufacturing Method 33 2006
8,237,140 Self-aligned, embedded phase change RAM 3 2006
* 2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 173 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 3 2006
7,560,337 Programmable resistive RAM and manufacturing method 31 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 10 2006
7,785,920 Method for making a pillar-type phase change memory element 3 2006
7,741,636 Programmable resistive RAM and manufacturing method 3 2006
* 2007/0161,186 Programmable Resistive RAM and Manufacturing Method 170 2006
7,450,411 Phase change memory device and manufacturing method 4 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
* 2007/0158,690 Programmable Resistive RAM and Manufacturing Method 167 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 10 2006
* 2008/0121,861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory 4 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
* 2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 167 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 57 2006
7,504,653 Memory cell device with circumferentially-extending memory element 31 2006
7,510,929 Method for making memory cell device 2 2006
* 2008/0096,375 Method for Making Memory Cell Device 3 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 4 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 6 2006
* 2008/0094,885 Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States 6 2006
* 2008/0096,341 Method for Manufacturing a Resistor Random Access Memory with Reduced Active Area and Reduced Contact Areas 2 2006
8,067,762 Resistance random access memory structure for enhanced retention 5 2006
* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention 6 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 5 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 23 2006
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell 49 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 80 2006
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides 14 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 2 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 91 2006
7,718,989 Resistor random access memory cell device 9 2006
* 2008/0157,053 Resistor Random Access Memory Cell Device 35 2006
7,786,460 Phase change memory device and manufacturing method 75 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 18 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method 160 2007
7,483,292 Memory cell with separate read and program paths 5 2007
* 2008/0186,761 Memory Cell with Separate Read and Program Paths 2 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 4 2007
7,534,647 Damascene phase change RAM and manufacturing method 4 2007
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 88 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 5 2007
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 2 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 12 2007
8,610,098 Phase change memory bridge cell with diode isolation device 0 2007
7,755,076 self align side wall active phase change memory 40 2007
7,569,844 Memory cell sidewall contacting side electrode 37 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 59 2007
7,463,512 Memory element with reduced-current phase change element 21 2007
7,701,759 Memory cell device and programming methods 13 2007
8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory 0 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory 8 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
* 2009/0034,323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 9 2007
9,018,615 Resistor random access memory structure having a defined small area of electrical contact 0 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 20 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 21 2007
7,663,135 Memory cell having a side electrode contact 5 2007
7,551,473 Programmable resistive memory with diode structure 20 2007
7,535,756 Method to tighten set distribution for PCRAM 13 2007
7,919,766 Method for making self aligning pillar memory cell device 13 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 6 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 13 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 20 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 4 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 9 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 3 2008
7,879,645 Fill-in etching free pore device 13 2008
7,619,311 Memory cell device with coplanar electrode surface and method 13 2008
8,158,965 Heating center PCRAM structure and methods for making 1 2008
7,932,101 Thermally contained/insulated phase change memory device and method 5 2008
8,084,842 Thermally stabilized electrode structure 4 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 13 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 14 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 75 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 1 2008
7,642,123 Thermally insulated phase change memory manufacturing method 4 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 2 2008
7,777,215 Resistive memory structure with buffer layer 37 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 4 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 7 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 59 2008
7,719,913 Sensing circuit for PCRAM applications 2 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 3 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 2 2008
* 8,036,014 Phase change memory program method without over-reset 9 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 2 2008
8,907,316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 1 2008
8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 4 2008
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 9 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 1 2008
7,869,270 Set algorithm for phase change memory cell 5 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 63 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 8 2009
8,107,283 Method for setting PCRAM devices 3 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
8,933,536 Polysilicon pillar bipolar transistor with self-aligned memory element 1 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 3 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 19 2009
8,077,505 Bipolar switching of phase change device 1 2009
8,097,871 Low operational current phase change memory structures 1 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 21 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 7 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,809,829 Phase change memory having stabilized microstructure and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 5 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 2 2009
8,110,822 Thermal protect PCRAM structure and methods for making 12 2009
7,894,254 Refresh circuitry for phase change memory 5 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2009
8,198,619 Phase change memory cell structure 1 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 3 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 1 2009
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 7 2009
7,972,895 Memory cell device with coplanar electrode surface and method 2 2009
7,993,962 I-shaped phase change memory cell 1 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 2 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 1 2009
7,929,340 Phase change memory cell and manufacturing method 5 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 1 2010
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 22 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 5 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 4 2010
7,920,415 Memory cell device and programming methods 0 2010
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 5 2010
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 8 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 1 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 4 2010
8,178,405 Resistor random access memory cell device 2 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 2 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 5 2010
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 13 2010
8,178,388 Programmable resistive RAM and manufacturing method 3 2010
8,729,521 Self aligned fin-type programmable memory cell 2 2010
8,237,148 self align side wall active phase change memory 0 2010
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 4 2010
8,310,864 Self-aligned bit line under word line memory array 4 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 4 2010
7,943,920 Resistive memory structure with buffer layer 1 2010
8,008,114 Phase change memory device and manufacturing method 1 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 5 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 2 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 4 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 3 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 2 2010
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 22 2010
8,110,430 Vacuum jacket for phase change memory element 1 2010
8,497,705 Phase change device for interconnection of programmable logic device 0 2010
8,467,238 Dynamic pulse operation for phase change memory 1 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 3 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 3 2011
* 8,912,515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory 2 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,497,182 Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory 1 2011
8,313,979 Phase change memory cell having vertical channel access transistor 1 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,587,983 Resistance random access memory structure for enhanced retention 3 2011
8,987,700 Thermally confined electrode for programmable resistance memory 0 2011
8,916,845 Low operational current phase change memory structures 0 2011
8,779,408 Phase change memory cell structure 0 2012
8,860,111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8,624,236 Phase change memory cell having vertical channel access transistor 1 2012
9,236,568 Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory 0 2013
8,916,414 Method for making memory cell by melting phase change material in confined space 0 2013
9,076,964 Methods for forming resistance random access memory structure 0 2013
8,853,047 Self aligned fin-type programmable memory cell 0 2014
9,159,412 Staggered write and verify for phase change memory 0 2014
9,336,879 Multiple phase change materials in an integrated circuit for system on a chip application 0 2015
 
University of South Hampton (1)
9,029,823 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 0 2013
 
STMICROELECTRONICS S.R.L. (7)
7,122,824 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 124 2004
* 2004/0211,953 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 0 2004
* 2007/0057,341 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured 1 2004
7,372,166 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof 0 2005
* 2006/0049,391 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof 0 2005
7,618,840 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof 0 2006
* 2006/0284,160 SUBLITHOGRAPHIC CONTACT STRUCTURE, IN PARTICULAR FOR A PHASE CHANGE MEMORY CELL, AND FABRICATION PROCESS THEREOF 3 2006
 
WINBOND ELECTRONICS CORP. (1)
* 2009/0032,794 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF 14 2007
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 6,855,633 Method for fabricating semiconductor device 1 2002
 
UNIVERSITY OF SOUTHAMPTON (1)
8,624,215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 3 2006
* Cited By Examiner