Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method

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United States of America Patent

PATENT NO 6617249
APP PUB NO 20020123177A1
SERIAL NO

09799148

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Abstract

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A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.

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Patent Owner(s)

Patent OwnerAddress
AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITEDSINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bradley, Paul D Mountain View, CA 30 2424
Larson, III John D Palo Alto, CA 53 3180
Ruby, Richard C Menlo Park, CA 126 7330

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