High frequency power amplifier module, and wireless communications system

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United States of America Patent

PATENT NO 6617927
SERIAL NO

10122382

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Abstract

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A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATION2-24 TOYOSU 3-CHOME KOTO-KU TOKYO 135-0061

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adachi, Tetsuaki Chiisagata, JP 47 653
Akamine, Hitoshi Maebashi, JP 42 665
Morikawa, Masatoshi Hannou, JP 47 624
Numanami, Masahito Komoro, JP 15 88
Nunogawa, Yasuhiro Takasaki, JP 28 556
Shibuya, Tsuyoshi Komoro, JP 14 372

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